- Jess***Jones
- 2026/04/17
Datasheets
G5S12010BM.pdfGusto mo ng isang mas mahusay na presyo?
Idagdag sa CART at Isumite ang RFQ ngayon, makikipag -ugnay kami kaagad sa iyo.
| Dami | Presyo ng isang piraso | Ext.Presyo |
|---|---|---|
| 1+ | $17.159 | $17.16 |
| 210+ | $6.847 | $1,437.87 |
| 510+ | $6.619 | $3,375.69 |
| 990+ | $6.505 | $6,439.95 |
Mga pagtutukoy ng G5S12010BM Tech
Global Power Technology-GPT - G5S12010BM Teknikal na Mga Pagtukoy, Mga Katangian, Mga Parameter at Mga Bahagi na may Katulad na Mga Pagtukoy sa Global Power Technology-GPT - G5S12010BM
| Katangian ng produkto | Halaga ng katangian | |
|---|---|---|
| Manufacturer | SemiQ | |
| Boltahe - Forward (Vf) (Max) @ Kung | 1.7 V @ 5 A | |
| Boltahe - DC Reverse (Vr) (Max) | 1200 V | |
| teknolohiya | SiC (Silicon Carbide) Schottky | |
| Supplier aparato Package | TO-247AB | |
| bilis | No Recovery Time > 500mA (Io) | |
| serye | - | |
| Reverse Recovery Time (trr) | 0 ns |
| Katangian ng produkto | Halaga ng katangian | |
|---|---|---|
| Package / Kaso | TO-247-3 | |
| Package | Cut Tape (CT) | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Salalayan Type | Through Hole | |
| diode Configuration | 1 Pair Common Cathode | |
| Current - Reverse pagtagas @ Vr | 50 µA @ 1200 V | |
| Kasalukuyang - Average rectified (Io) (per Diode) | 19.35A (DC) |
| KATANGIAN | PAGLALARAWAN |
|---|---|
| Maabot ang katayuan | REACH info available upon request |
| ECCN | EAR99 |
Ang tatlong bahagi sa kanan ay may katulad na mga pagtutukoy sa Global Power Technology-GPT G5S12010BM.
| Katangian ng produkto | ![]() |
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|---|---|---|---|---|
| Numero ng Bahagi | G5S12010BM | G5S12016BM | G5S12016B | G5S12015L |
| Manufacturer | Global Power Technology-GPT | Global Power Technology-GPT | Global Power Technology-GPT | Global Power Technology-GPT |
| serye | - | - | - | - |
| Supplier aparato Package | TO-247AB | TO-247AB | TO-247AB | TO-247AB |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns |
| Kasalukuyang - Average rectified (Io) (per Diode) | 19.35A (DC) | 27.9A (DC) | 27.9A (DC) | - |
| diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | - |
| teknolohiya | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Boltahe - Forward (Vf) (Max) @ Kung | 1.7 V @ 5 A | 1.7 V @ 8 A | 1.7 V @ 8 A | 1.7 V @ 15 A |
| Package / Kaso | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Salalayan Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Current - Reverse pagtagas @ Vr | 50 µA @ 1200 V | 50 µA @ 1200 V | 50 µA @ 1200 V | 50 µA @ 1200 V |
| Boltahe - DC Reverse (Vr) (Max) | 1200 V | 1200 V | 1200 V | 1200 V |
| Package | Cut Tape (CT) | Cut Tape (CT) | Cut Tape (CT) | Cut Tape (CT) |
| bilis | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
I -download ang G5S12010BM PDF Datasheets at Global Power Technology-GPT na dokumentasyon para sa G5S12010BM - Global Power Technology-GPT.
G5S12015LGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 55A TO247AB
G5S12015AGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 53A TO220AC
G5S12008AGlobal Power Technology-GPTDIODE SIC 1.2KV 24.8A TO220AC
G5S12010CGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 34.2A TO252
G5S12008PMGlobal Power Technology-GPTDIODE SIC 1.2KV 27.9A TO247AC
G5S12005PGlobal Power Technology Co. LtdSIC SCHOTTKY DIODE 1200V 5A 2-PI
G5S12016BMGlobal Power Technology-GPTSIC SCHOTTKY DIODE 1200V 16A 3-P
G5S12008CGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 28.9A TO252
G5S12015PMGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 55A TO247AC
G5S12020AGlobal Power Technology-GPTDIODE SIC 1.2KV 63.5A TO220AC
G5S12005HGlobal Power Technology Co. LtdSIC SCHOTTKY DIODE 1200V 5A 2-PI
G5S12008DGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 26.1A TO263
G5S12008HGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 16A TO220F
G5S12005DGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 21A TO263
G5S12010DGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 30.9A TO263
G5S12010PMGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 33A TO247AC
G5S12010AGlobal Power Technology-GPTDIODE SIL CARB 1.2KV 37A TO220AC
G5S12016BGlobal Power Technology-GPTSIC SCHOTTKY DIODE 1200V 16A 3-PAng iyong email address ay hindi mai -publish.
| Mga Karaniwang Bansa Logistic Oras Sanggunian | ||
|---|---|---|
| Rehiyon | Bansa | Logistic Time (Araw) |
| America | Estados Unidos | 5 |
| Brazil | 7 | |
| Europa | Alemanya | 5 |
| United Kingdom | 4 | |
| Italya | 5 | |
| Oceania | Australia | 6 |
| New Zealand | 5 | |
| Asya | India | 4 |
| Hapon | 4 | |
| Gitnang Silangan | Israel | 6 |
| Sanggunian ng DHL & FedEx Charges Sanggunian | |
|---|---|
| Mga singil sa Pagpapadala (kg) | Sanggunian DHL (USD $) |
| 0.00kg-1.00kg | USD$30.00 - USD$60.00 |
| 1.00kg-2.00kg | USD$40.00 - USD$80.00 |
| 2.00kg-3.00kg | USD$50.00 - USD$100.00 |

Gusto mo ng isang mas mahusay na presyo? Idagdag sa CART at Isumite ang RFQ ngayon, makikipag -ugnay kami kaagad sa iyo.